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This paper presents the methods of fabricating narrow parallel submicrometric stripes in silicon dioxide and a resist layer. The experiments were conducted by two techniques: double patterning lithography and double exposure lithography. In addition to the above mentioned processes, mask translation was applied. For all conducted experiments, chrome masks and a 405 nm line of the high pressure mercury lamp of an MA-56 Mask Aligner System were used. The main aim of the performed tests was to establish the utility and the possible applications of the methods used.

The new method of fabrication of submicron structures by optical lithography with mask shifting and mask rotation