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In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φ b ), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φ b )) as a function of barrier height (Φ b ) has been studied. Therefore, the modified  ( ( ln ⁡ ( I 0 T 2 ) − ( q 2 σ s 0 2 2 kT 2 ) = ln ⁡ ( AA * ) − q ∅ B 0 kT ) vs . ( 1 kT ) ) ( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT ){\rm{vs}}.( {{1 \over {{\rm{kT )} )  relation has been extracted from (I-V) characteristics, where the values of Φ B0  and  A Simul * {\rm{A}}_{{\rm{Simul}}}^*  have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation