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Although hydrogenated amorphous silicon has its important practical application there still is not any generally accepted model explaining all the physical phenomena on-going in this matter. The aim of this paper is to familiarize the reader with a model allowing to explain the empirically observed compensation effect (Meyer-Neldel rule – MNR). This effect reflects the correlation between activation energy and pre-exponential factor in relation to the activation dependence of electrical conductivity of semiconductors, including a-Si:H. The model assumes that the recombination of carriers is conditioned by emission of series of monoenergetic phonons. The number of emitted phonons is dependent on the activation energy of disordered semiconductor, which influences the probability of recombination and thus the concentration of free electrons. Consideration of the relationship between compensation effect and Urbach rule is also presented.

Compensation Effect in the Amorphous Hydrogenated Silicon from Point of View of the Barrier-Cluster Model