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The present paper describes a new architecture of a high-voltage solid-state pulse generator. This generator combines the two types of energy storage systems: inductive and capacitive, and consequently operates two types of switches: opening and closing. For the opening switch, an isolated gate bipolar transistor (IGBT) was chosen due to its interesting characteristics in terms of controllability and robustness. For the closing switch, two solutions were tested: spark-gap (SG) for a powerful low-cost solution and avalanche mode bipolar junction transistor (BJT) for a fully semiconductor structure. The new architecture has several advantages: simple structure and driving system, high and stable controllable repetition rate that can reach 1 kHz, short rising time of a few nanoseconds, high gain and efficiency, and low cost. The paper starts with the mathematical analysis of the generator operation followed by numerical simulation of the device. Finally add a comma the results were confirmed by the experimental test with a prototype generator. Additionally, a comparative study was carried out for the classical SG versus the avalanche mode BJT working as a closing switch.

Compact nanosecond pulse generator based on IGBT and spark gap cooperation