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Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. Challenges of applying such fast switches include accurate extraction and optimization of parasitics especially when 6high-efficiency operation, all ...

Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications