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A study is conducted to evaluate 1.2 kV silicon-carbide (SiC) MOSFETs in a cascaded H-bridge (CHB) three-phase inverter for medium-voltage applications. The main purpose of this topology is to remove the need for a bulky 60 Hz transformer normally used to step up the output signal of a voltage source inverter to a medium-voltage level. Using SiC devices (1.2-6.5 kV SiC MOSFETs) which have a high b...

Evaluation of 1.2 kV SiC MOSFETs in multilevel cascaded H-bridge three-phase inverter for medium-voltage grid applications