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We proposed a method for calculation of elastic mechanical strain and induced electric fields in the boundary region “quantum wire – matrix material”. It is shown that the surface of a quantum wire of arbitrary shape can be approximated by a limited number of elementary line segments. This approach makes it possible to integrate the Green’s function in analytical form using the Stroh approach. The objects of investigation were square quantum wires of indium arsenide placed in an infinite space of gallium arsenide matrix material, as well as hexagonal indium nitride quantum wires enclosed in an aluminum nitride infinite space. It is established that a mechanical strain jump is formed at the quantum wire – matrix material boundary for both types of quantum wires. The elastic strain at the center of the InAs square wire is (γxx + γzz) = 0.107, at the center of the InN hexagonal wire is (γxx + γzz) = 0.196. Inside the square InAs quantum wire the distribution 1 Южно-Российский государственный политехнический университет (НПИ) им. М.И. Платова (Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Rostov Region, Russian Federation), Российская Федерация, 346428, г. Новочеркасск, ул. Просвещения, 132, e-mail: chebotarev.sergei@gmail.com 2 Южный научный центр Российской академии наук (Southern Scientific Centre, Russian Academy of Sciences, Rostov-on-Don, Russian Federation), Российская Федерация, 344006, г. Ростов-на-Дону, пр. Чехова, 41

INDUCED MECHANICAL STRAIN AND ELECTRIC FIELDS IN NANOHETEROSTRUCTURES WITH QUANTUM WIRES