English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

proceed only by annealing in a vacuum of 5×10-3 mmHg. By annealing in a dry Hydrogen atmosphere or in a vacuum of 3×10-4 mmHg the selective growth of (100)〔001〕 oriented grain did not take place, but the normal grain growth proceeded slightly Further. Development of the secondary recrystallization was not completed by annealing in a vacuum of 1×10-1mmHg. Table 1 summarizes the aspects of secondary recrytallization upon temperature and annealing time. It has been reported that small quantities of Oxygen are necessary to decrease the surface energy of the (100) plane (1) (2) (3). A vacuum of 3×10-4 mmHg is also an oxidizing atmosphere far Iron at the experimental temperature from the view point of the equilibrium constant. But it is not positively known whether enough Oxygen atoms are supplied or not to contaminate the surface during the period of time the specimen is in a vacuum and reduce the surface energy of the (100) plane. However, when too many Oxygen atoms are present in a vacuum of 1×10-1mmHg, an inhibiting grain boundary migration action may be predominant. Since vacuum pressures of 10-3 to 10-1mmHg can be easily pro-

(100)[001] Secondary Recrystallization in Silicon Steel by &ldquo;Low Vacuum&rdquo; Annealing

(100)[001] Secondary Recrystallization in Silicon Steel by “Low Vacuum” Annealing