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N-type Bi2Te2.67Se0.33 thermoelectric materials with added constituent elements were prepared without the addition of harmful dopants using mechanical alloying (MA) followed by hot pressing (HP). All the prepared samples were identi ed from the Bi2Te3–Bi2Se3 solid-solution diffraction peak. They were all single-phase n-type semiconductors. The maximum dimensionless gures of merit, ZT, of Bi2Te2.67(Se0.33)1+0.06, Bi2(Te2.67)1+0.06Se0.33, and Bi2(Te2.67Se0.33)1+0.03 were 0.93 at 440 K, 0.99 at 441 K, and 0.97 at 442 K, respectively. These results indicate that the gure of merit of Bi2Te2.67Se0.33 doped with constituent elements, prepared using the MA–HP process, is nearly same as the highest value, i.e., 1.0, reported in the literature. [doi:10.2320/matertrans.M2016031]

materials transactions

Constituent Element Addition to &lt;i&gt;n&lt;/i&gt;-Type Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;2.67&lt;/sub&gt;Se&lt;sub&gt;0.33&lt;/sub&gt; Thermoelectric Semiconductor without Harmful Dopants by Mechanical Alloying