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The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height ()B), ideality factor (n), saturation current (I0), doping concentration (ND), and series resistance (Rs), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(Io/T 2 ) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height (   bo) and standard deviation (·0) calculated using the apparent Schottky barrier height ()ap) versus 1/2kT plot were 1.26eVand 0.15eV, respectively. From a fit of the modified Richardson plot of ln(I0/T 2 ) ¹ (q·) 2 /2(kT) 2 versus 1000/T, the A** was extracted as 134A/cm 2 K 2 , which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperature. Furthermore, the conduction mechanism dominating the reverse-bias leakage current in Au/PEDOT:PSS/n-Si SBD was described and discussed. [doi:10.2320/matertrans.M2014263]

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Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer