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Chromium oxynitride Cr(N,O) thin films were prepared by pulsed laser deposition in a highly reactive atmosphere, which consisted of pure oxygen gas and nitrogen plasma from a radio-frequency radical source. In order to control the oxygen content in the thin films, oxygen partial pressure (PO2) in the chamber was varied from 5 to 10 © 10 ¹5 Pa under a fixed total pressure of 1.5 © 10 ¹2 Pa. The thin films were then characterized by X-ray diffraction, infrared spectroscopy, electron energy loss spectroscopy and nano-indentation testing. It was found that the oxygen content of the thin films changed from 0 to 62mol% with increasing PO2. The thin films with only the NaCl-type (B1) Cr(N,O) phase were prepared under PO2 < 7.5 © 10 ¹5 Pa. The chromium content of the B1 phase decreased from 47mol%, which was close to the stoichiometric composition of CrN, to 40mol% when the oxygen content was increased. The hardness increased up to 32GPa with increasing PO2 up to 7.5 © 10 ¹5 Pa. [doi:10.2320/matertrans.M2013047]

Controlling Oxygen Content by Varying Oxygen Partial Pressure in Chromium Oxynitride Thin Films Prepared by Pulsed Laser Deposition