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A thermoelectric thin-film device consisting of n-type Bi2Te3 and p-type Sb2Te3 thin-film legs was prepared on a glass substrate by using co-evaporation and annealing process. The Seebeck coefficient and the power factor of the co-evaporated Bi2Te3 film were 130μV/K and 0.7 © 1014W/K2·m, respectively, and became substantially improved to 1160μV/K and 16 © 1014W/K2·m by annealing at 400°C for 20min. While the Seebeck coefficient of the co-evaporated Sb2Te3 thin film was 72 μV/K, it increased significantly to 165­142μV/K by annealing at 200­400°C for 20min. A maximum power factor of 25 © 1014W/K2·m was achieved for the co-evaporated Sb2Te3 film by annealing at 400°C for 20min. A thermopile sensor consisting of 10 pairs of n-type Bi2Te3 and p-type Sb2Te3 thin-film legs exhibited a sensitivity of 2.7mV/K. [doi:10.2320/matertrans.M2013010]

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Thermoelectric Characteristics of n-Type Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; and p-Type Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; Thin Films Prepared by Co-Evaporation and Annealing for Thermopile Sensor Applications