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We have grown (100) oriented composite lms of Si and Ni silicide nanocrystals (Ni–Si NC lm) on substrates of Si on insulator (SOI) and Si on quartz glass (SOQ). Owing to improvement of carrier transport properties and reduction of the thermal conductivity in the oriented lms, they have higher dimensionless gures of merit, ZT of 0.22–0.42 for p-type Ni–Si NC lm and 0.08–0.13 for n-type Ni–Si NC lm̶than that of bulk Si (ZT < 0.01) at 30°C. The ZT values of p-type and n-type Ni–Si NC lms were increased to 0.65 and 0.40 at 500°C, respectively. [doi:10.2320/matertrans.E-M2016807]

Thermoelectric Properties of (100) Oriented Silicon and Nickel Silicide Nanocomposite Films Grown on Si on Insulator and Si on Quartz Glass Substrates