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Ternary compound Ti 3 SiC 2 was successfully synthesized by pulse discharge sintering the powder mixture of TiH 2 /SiC/C. When the molar ratio of the starting powder mixture was selected to be TiH 2 SiC : C = 2.8 : 1 : 0.8, single-phase dense Ti 3 SiC 2 was synthesized at 1400°C for 20 min. The grain size of synthesized Ti 3 SiC 2 strongly depends on the sintering temperature. The synthesis mechanism of Ti 3 SiC 2 was revealed to be completed via the reactions among the intermediate phases of Ti 5 Si 3 C x and TiC. It is found that dehydrogenation was accelerated by the synthesis reaction during sintering progress. Compared with Ti/SiC/C powder mixture, the TiH 2 /SiC/C mixed powder is favorable for synthesizing Ti 3 SiC 2 through PDS technique.

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Synthesis of High-Purity Ti&lt;SUB&gt;3&lt;/SUB&gt;SiC&lt;SUB&gt;2&lt;/SUB&gt; through Pulse Discharge Sintering of TiH&lt;SUB&gt;2&lt;/SUB&gt;/SiC/C Powder Mixture