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Hf films have been deposited on Si(100) substrate with or without a substrate bias voltage using a non-mass separated ion beam deposition (IBD) method. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) have been used to determine impurity concentrations of Hf films and a Hf target. By the SIMS results with Cs + and O 2 + ion beams, the Hf film deposited at V s = 0 V contains more impurities than the Hf film deposited at V s = -50 V. In addition, from GDMS results for the Hf target and the Hf films deposited at V s = 0 and -50 V, almost all the impurities have reduced by applying a negative substrate bias voltage. It means that applying a negative bias voltage to the substrate can decrease the impurity concentrations in Hf films.

Influence of Substrate Bias Voltage on the Impurity Concentrations in Hf Films Deposited by Ion Beam Deposition Method