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TbFe 2 films prepared by a flash evaporation system onto Si(100) or polyimide substrate have been irradiated with different Ar ion doses at zero, 1.3 × 10 1 7 and 2.7 × 10 1 7 cm - 2 and at 10kV. Magnetostrictive properties, i.e., saturated magnetostriction and magnetostrictive susceptibility, of TbFe 2 film with disordered structure were improved by Ar ion beam irradiation. This result was probably caused increasing of in-plane compressive stress corresponding to change of volume magnetostriction.

Ar Ion Beam Irradiation Effects on Magnetostrictive Characteristics of Tb-Fe Thin Film