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The oxidation behavior of B 4 C-(25-60 mol%)SiC composites prepared by arc-melting was investigated in the temperature range of 1073 to 1773K using a thermogravimetric technique. Liquid borosilicate, solid SiO 2 and carbon were identified as oxidation products by X-ray diffraction and Raman spectroscopy. Mass gain was observed during oxidation at 1073 K, while mass loss due to the vaporization of boron oxide in liquid borosilicate was observed at temperatures of 1273 K and higher. In situ Raman spectra of the surface of B 4 C-SiC composites indicated that the silica concentration in the liquid borosilicate increased with increasing SiC content in the composite. Micro-Raman spectroscopy showed that carbon was enriched in the borosilicate layer close to the oxide/composite interface. The parabolic rate constants for B 4 C-50mol%SiC composites at 1073 K were proportional to ambient oxygen partial pressures ranging between 30 and 100kPa. The diffusion of oxygen molecules through the liquid borosilicate layer could be the rate-controlling process. The increase of SiC content in the B 4 C-SiC composites improved the oxidation resistance in both the mass gain and mass loss regions.

Oxidation of Boron Carbide-Silicon Carbide Composite at 1073 to 1773 K