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Photoluminescence (PL), Raman, and transmission IR spectral measurements of porous silicon (PS) have been carried out during exposure to thermoelectrons and also subsequent exposure to H atoms, H 2 O and O 3 . The PL band of as-anodized PS was significantly decreased by the first exposure to thermoelectrons accompanied by the intensity reduction of the IR bands due to hydrogenated Si species (Si-H x ; x = 1-3). Upon subsequent exposure to H atoms the PL band intensity was almost recovered but never exceeded its original intensity. This PL recovery was accompanied by re-generation of Si-H x bottds. In contrast, an overshooting recovery in the PL intensity took place when thermoelectron-treated PS was exposed to H 2 O or O 3 . The obtained IR spectra showed that Si-O and/or Si-OH bonds were formed at the PS surface. These results demonstrate that the PL of the PS is quite sensitive to the oxygen-included surface bonds.

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&lt;I&gt;In-situ&lt;/I&gt; Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H&lt;SUB&gt;2&lt;/SUB&gt;O and /O&lt;SUB&gt;3&lt;/SUB&gt;