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Barium titanate (BaTiO 3 ) films were prepared on (100)Pt/(100)MgO substrates by by metal-organic chemical vapor deposition (MOCVD). The effects of deposition temperature (T dep ) and O 2 partial pressure (P O2 ) on the microstructure and dielectric properties of the films were investigated. The BaTiO 3 films prepared at T dep = 873 K showed a randomly orientated granular structure, while those prepared at T dep = 973 K showed a significant (001) orientation with a columnar structure. The grain size was strongly affected by P O2 and showed the maximum at P O2 = 66 to 93 Pa. The dielectric constant increased from 93 to 640 with increasing grain size from 20 to 130 nm, showing a broad peak at 350 to 380 K.

Microstructure and Dielectric Properties of Barium Titanate Film Prepared by MOCVD