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Growth of a TiO 2 film on a Si wafer by CVD method was studied for a new design of chemically stable device which is useful in the visible region and increases the efficiency of the photocatalytic decomposition process of water. This design is made up of a monolithic structure of a TiO 2 thin film and a Si solar cell. The TiO 2 film was deposited on a Si substrate by the vapor phase reaction of Ti(OPr i ) 4 with water at temperatures from room temperature to 473 K. At room temperature, a rough TiO 2 film with a nano-sized cone shape deposit was observed by AFM. The smooth TiO 2 film of ∼ 10 nm thickness was obtained by the reaction of 80 Pa Ti(OPr i ) 4 and 493 Pa water vapors at 473K for 10.8 ks. The surface and the thickness of the film became rougher and thicker, respectively, with increasing pressure of Ti(OPr i ) 4 .

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Preparation of a TiO&lt;SUB&gt;2&lt;/SUB&gt; Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr&lt;SUP&gt;i&lt;/SUP&gt;)&lt;SUB&gt;4&lt;/SUB&gt;