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We performed oxygen–ion–implantation into silicon carbide (SiC) to produce SiC–on–insulator structures. Single crystals of 6H–SiC (0001) wafer were implanted with 180 keV oxygen ions at 923 K to fluences ranging 0.2–1.4×1018 cm-2. Microstructures of the specimens were examined using cross–sectional transmission electron microscopy and scanning transmission electron microscopy (STEM) equipped with an energy dispersive X–ray spectrometer (EDXS) and an electron energy–loss spectrometer (EELS). A continuous buried amorphous layer is formed in specimens subjected to ion fluences 0.4×1018 cm-2. The amorphous structures change drastically between 0.7 and 1.4×1018 cm-2. STEM–EDXS/EELS measurements show that the sample irradiated to fluences of0.7×1018 cm-2 possesses a buried amorphous SiCxOy layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well–defined SiO2 layer including self–bonded carbon atoms is formed in the crystal irradiated to a fluence of 1.4×1018 cm-2, and this amorphous layer has a layered structure due to compositional variations of silicon, carbon, and oxygen. The formation of Si–O and C–C bondings is also confirmed by pair–correlation functions extracted from Fourier transformation of nano–beam electron diffraction patterns. These results indicate that the high–dose oxygen–ion–implantation is a viable means to produce SiC–on–insulator structures.

Structural Analysis of Buried Amorphous Layer in Oxygen-Ion-Implanted Silicon Carbide