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The efficiency of thermoelectric (TE) materials is quantified by a dimensionless figure of merit ZT. To enhance ZT, it is important to reduce the lattice thermal conductivity (klat) with maintaining the high electrical conductivity. Cagelike compounds with phononglass and electroncrystal properties such as filledskutterudites have attracted much attention as highperformance TE materials. In these compounds, the guest atoms in the cages of the host framework lattice rattle and reduce the klat. Our group has focused on semiconductor RE5X3P (RE=Gd, La, X=Si, Ge). RE5X3P have a cagelike structure composed of RE and X, in which P can be filled in the cages. In the present study, prior to the TE characterization of RE5X3P, polycrystalline bulk samples of RE5X3 were prepared and their hightemperature TE properties were examined. Gd5Si3 and Gd5Ge3 showed a metallic behavior with relatively low klat. At around 400 K, the klat values of Gd5Si3 and Gd5Ge3 were 3.3 and 1.7 W m-1 K-1, respectively. [doi:10.2320/jinstmet.J2014005]

Thermoelectric Properties of RE5X3(RE=Gd, La, X=Si, Ge)