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Characteristic cellular structure is formed on the ion implanted surface of GaSb, InSb and Ge, by the selforganizational behavior of point defects induced by ion irradiation. In this work, fabrication of the nanocell structure is performed for Ge. Formation process of the cellular structure in Ge is somewhat different from those in GaSb and InSb. In Ge, the irradiated layer is amorphized prior to the cell formation while its amorphization occurs after the cell formation in GaSb and InSb. Two kinds of nanocell fabrication were performed and the nanocell developments in both fabrications were compared. One is initially to form the ordered void lattice and to develop it to the cell lattice. In the other method, initially the surface layer of Ge wafer was amorphized by ordinary ion irradiation and then, nanocell structure was formed on it by the same process. These processes were performed using 30 keV Ga+ in a focused ion beam apparatus at room temperature. The results showed that secondary void formation was remarkable in the initially amorphized Ge. Probably the high mobility of the vacancytype defects in amorphous Ge might have accelerated the formation of secondary voids between the initial voids.

Fabrication of Ordered Nano-Cell Structure on Ge Surface by Focused Ion Beam