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We investigated the magnetoresistance effect for a magnetic tunnel junction(MTJ) using a Co2Ti0.5Mn0.5Al electrode on a Cr buffered MgO(001) single crystal substrate. The Co2Ti0.5Mn0.5Al formed an ordered L21 and B2 structures after postannealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in Co2Ti0.5Mn0.5Al annealed at 673 K. The MTJ using a Co2Ti0.5Mn0.5Al electrode with B2 structure exhibited tunnel magnetoresistance(TMR) ratio of 37 at room temperature and 60 at 5 K. The TMR ratio was larger than that of MTJ using a Co2Ti0.5Mn0.5Al electrode with L21 structure in this study.

Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film