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This paper focuses on the heat transfer and structural stress analysis of the   micro- scale packaging structure of a high-power light emitting diode. The   thermal-effect and thermal-stress of light emitting diode are determined   numerically. Light emitting diode is attached to the silicon substrate   through the wire bonding process by using epoxy as die bond material. The   silicon substrate is etched with holes at the bottom and filled with high   conductivity copper material. The chip temperature and structure stress   increase with input power consumption. The micro light emitting diode is   mounted on the heat sink to increase the heat dissipation performance, to   decrease chip temperature, to enhance the material structure reliability and   safety, and to avoid structure failure as well. This paper has successfully   used the finite element method to the micro-scale light emitting diode heat   transfer and stress concentration at the edges through etched holes

Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode