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Ce-doped strontium bismuth titanate (SrBi4Ti4O15, SBT) powders were prepared  by glycine-nitrate process at 400-500°C and the ceramics were sintered at  980°C. The phase composition, morphology and electric properties were  investigated. It was found that the calcined powders consist of a single  phase SBT and the calcination temperature is lower than that for the  conventional solid state method. The morphology of Cedoped SBT is flake-like  and the layer size decreases with Ce-addition from 12 to 2μm confirming  that the addition of Ce3+ inhibits grain growth. The Curie temperature of  Ce-doped SBT increased for about 20°C compared to the pure SBT. The tan δ  was ~0.005 at 35°C and even below 0.05 up to 400°C. The temperature  coefficient of dielectric constant was ~0.012 and the rate of frequency  change was 0.01-0.04, which indicated the high stability of dielectric  properties of the Ce-doped SBT. Impedance analysis revealed that the  conduction mechanism of the Ce-doped SrBi4Ti4O15 ceramics is mainly grain  conduction.

Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process