English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The model, which confirms that the interaction of trapped positive charges ((hydrogenous species)) in the oxide and electrons from the substrate is an important component of radiation-induced interface-trap buildup, is presented. The “one-to-Koi” relationship between the number of trapped holes annealed and number of interface-trap generated is used for prediction of MOS device response in space environment. The model of enhanced low dose rate effect (ELDRS) is proposed. ELDRS conversion model is based on the assumption that there are two types of traps: shallow and deep. The time constants of these traps are different and correspond to interface-trap buildup at high dose rates for shallow traps and at low dose rates for deep traps. The possible physical mechanism of ELDRS effect elimination in the silicon-germanium (SiGe) bipolar transistors is described. The original mechanism of interface-trap buildup saturation based on radiation-induced charge neutralization (RICN) effect is presented.

Conversion model of the radiation-induced interface-trap buildup and its hardness assurance application