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Resistive switching (RS) effects in Pt/HfO 2 /TiN MIM capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures