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Current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. Therefore, the main objective of our work was obtaining more sop histicated electromigration models. The problem is addressed through a combination of different levels of atomistic modeling and already available continuum level macroscopic models. A novel method for an ab initio calculation  of the effective valence for electromigration is presented and its application on the analysis of EM behavior is demonstrated. Additionally, a simple analytical model for the early electromigration lifetime is obtained. We have shown that its application gives a reasonable estimate for the early electromigration failuresincluding the effect of microstructure.

Microstructural impact on electromigration: A TCAD study