English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The CERN RD50 collaboration has the aim to investigate radiation hard semiconductor devices for very high luminosity colliders. This is done by looking into four key aspects: Defect/material characterization, detector characterization, new structures and full detector systems. After the Phase II upgrade of the Large Hadron Collider (LHC) the luminosity will increase and therefore the radiation level for the silicon detectors. They have to be able to operate at fluences of up to 2×10$^{16}$ n$_{eq}$/cm$^{2}$. To cope with this, new semiconductor sensor technologies have been developed. This article will give a brief overview of the latest results of the RD50 collaboration for the characterization of 3D detectors, HV-CMOS pixel detectors, low gain avalanche detectors (LGAD) and sensors with slim/active edge.

High fluence effects on silicon detectors: damage and defects characterization: An overview of the state of the art of radiation resistance detectors