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Extreme Ultraviolet (EUV) radiation (photon energy hn = 20 284 eV, wavelength l’ 4:4 62 nm) can be used to efficiently modify the structure of photonic materials, photoresists etc. In fact, the EUV short wavelength, its short penetration length in matter (typically few tens of nm) and the availability of high-reflectivity ( 70% at l = 13 15 nm) normal-incidence multilayer mirrors allow high-spatial-resolution patterning on the aforementioned materials. This is leading to the development of the next generation lithography for micro-electronics. Consequently, EUV sources are a main object of study and they are largely exploited for metrology and tests on mirrors, innovative materials etc. Excluding large facilities like synchrotron machines, plasma sources are needed to efficiently generate EUV radiation. An EUV discharge produced plasma source is operating at the ENEA Frascati Research Centre. The source characterization by means of various diagnostic tools will be reported after a brief description of its principle of operation. Finally, some source applications involving the treatment of both photonic materials and innovative photoresists will be illustrated.

Enea Euv Discharge Produced Plasma Source: Diagnostics, Characterization And Applications