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Future High Energy Physics (HEP) experiments will include silicon sensors because of their superior resolution, tracking, and vertexing performance. Silicon sensors normally have an inactive region along the perimeter of the sensor. This inactive area on the perimeter contains the guard rings that protect the active area from electrical currents and damage caused in the manufacturing of the device. These inactive areas can significantly degrade the performance of the closely arranged sensors for HEP instrumentation and need to be minimized. In this paper, we describe a scribe, cleave, and passivate (SCP) technique for the fabrication of slim edges. We present results for nand p-type sensors with different sidewall passivations. The leakage current depends strongly on the type of sidewall passivation for pand n-type silicon. Furthermore, the amount of sidewall damage does change the leakage current. We tested different scribing techniques. Some scribe damage can be removed by an additional silicon etch step after cleaving. We also applied the technique to large area n-type single-sided strip detectors and are working towards a fully automated process.

“Scribing-Cleaving-Passivation” for High Energy Physics Silicon Sensors