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Though the expenditure of world energy is increasing exponentially, it is obvious that a solution of renewable energy must be utilized. In order to fulfil the energy demand of the mankind, utilization of the huge energy of the sun by transforming it into electricity is an emerging alternative way. Recently developed InGaN is a direct band gap solar photovoltaic material that has an amazing tunable band gap of 0.7eV to 3.4 eV and a high optical absorption coefficient over 10 /cm. In this paper, numerical simulations has been done using MATLab to explore the unknown potential of this promising material to design a high performance InGaN solar cell. All the required parameters for simulation were determined from the theory, literature and in some cases reasonable estimation. This simulation were done with different ratio of In and Ga content for the single junction solar cell and found a high conversion efficiency of 27.3% with this InGaN compound material.

Design of a Highly Efficient InGaN Single Junction Solar Cell Designed from Numerical Analysis