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Разработана и исследована референсная модель для анализа SGMOS (split gate MOS) транзисторов. Показано, что применение расщепленного затвора вполне эффективно в модуляционно-легированных структурах класса PDCFET. Снижение крутизны, быстродействия и изменение ВАХ транзисторных структур не носит катастрофический характер вплоть до температур – °C. Ключевые слова: периодически легированный канал; расщепленный затвор; МДП транзисторные структуры. The research of the reference model for impact ionization eff ects in SGMOS (split gate MOS) is presented. It is shown that the use of the split gate model of modulation-doped structures as PDCFET is quite eff ective for studies of impact ionization eff ects. Decrease in the steepness, speed, and change in the I–V characteristics of transistor structures is not catastrophic up to temperatures of – °C.

Multigate Mosfet Model With a Quantum Dot in the Channel