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The concept and fundamentals of the three-component zone melting method for growing single crystals of semiconductor solid solutions using seeds from constituent components is given. Using Pfann approximation,were calculated the concentration profiles of the components along the crystal axis in Ge−Si single crystals grown at different values of the operating parameters, such as the length of the molten zone and the composition of the initial macrohomogeneous rods of solid solutions. An analysis of the results yields the optimal technological parameters and conditions for growing single crystals with specified homogeneous and gradient compositions in the entire continuous series of Ge−Si solid solutions. It is shown that the three-component zone melting method is promising for growing single crystals of semiconductor solid solutions. Физика и техника полупроводников, 2021, том 55, вып. 2

Метод трехкомпонентной зонной плавки: моделирование концентрационного распределения компонентов в монокристаллах твердых растворов Ge-Si