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The current-voltage characteristics of silicon photodiodes were studied before and after irradiation with γ-rays with an energy of 1.25MeV and an irradiation dose of 0.5MRad. It has been established that the reverse current-voltage characteristic is determined by the Poole–Frenkel mechanism in a strong electric field with the influence of electron-phonon interaction. A technique has been developed and the parameters of the electronphonon interaction of a configuration single-coordinate model have been calculated from reverse current-voltage characteristics. It has been suggested that as a result of irradiation with γ-rays, divacancy centers of silicon with oxygen are formed, which determine the reverse currents of the photodiodes. Физика и техника полупроводников, 2021, том 55, вып. 1

Влияние электрон-фононного взаимодействия и облучения &gamma;-квантами на обратные токи кремниевых фотодиодов

Влияние электрон-фононного взаимодействия и облучения γ-квантами на обратные токи кремниевых фотодиодов