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A design and technology have been developed for the preparation of an asymmetric stepwise InAs/InAs1−ySby /InAsSbP heterostructure with an ultimate InSb content (up to y = 0.17) in the narrow-gap active region by vapor-phase epitaxy from metalorganic compounds. The electroluminescent characteristics of long-wavelength LEDs based on the proposed heterostructure, which emitted in the spectral range of 4.6−5.3 μm at room temperature, were studied. A linear decrease in the quantum efficiency of electroluminescence with an increasing InSb content in the active layer of the obtained LEDs was revealed. The advantage of using of the asymmetric heterostructure to create LEDs with a working wavelength of more than 4.5 μm has been shown. Физика и техника полупроводников, 2020, том 54, вып. 2

Длинноволновые светодиоды в окне прозрачности атмосферы 4.6-5.3 мкм