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The results of the study of the dynamic characteristics of 1.55 μm single-mode vertically cavity surface emitting lasers (VCSELs), which were made by wafer fusion of high-quality Bragg reflectors based of GaAs/AlGaAs and the active region based on thin highly strained InGaAs/InAlGaAs quantum wells, are presented. It has been found that the proposed design of the active region and the optical microcavity fundamentally make it possible to achieve a high level of differential laser gain in the temperature range of 20−85◦C, but weak electron localization leads to an increase in the gain compression at high temperatures. As a result, at 20◦C, the VCSEL modulation bandwidth can be increased from 9.2GHz to 11.5GHz by increasing output optical losses, while at 85◦C, the VCSEL modulation bandwidth does not exceed 8.5GHz, weakly depends on the output optical losses and is mainly limited by the saturation of the optical gain. Физика и техника полупроводников, 2019, том 53, вып. 8

fizika i tehnika poluprovodnikov

Влияние потерь на вывод излучения на динамические характеристики вертикально-излучающих лазеров спектрального диапазона 1.55 мкм, изготовленных методом спекания эпитаксиальных пластин