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The anodic oxidation rate of hydrogen-transferred silicon-on-insulator films as a function of subsequent annealing temperature as well as the depth from the top silicon surface was studied. It was obtained that the oxidation rate of the as-transferred SOI (silocon-on-insulator) films is lower by the factor of 5 than that of monocrystalline bulk silicon. The anodic oxidation rate grew both as the annealing temperature increased within the range 700−1100◦C and as step-by-step removing anodic oxidizing layers. The obtained results were explained by an increase in the anodic current efficiency and by the increasing interaction of oxygen and silicon atoms during defect annealing and hydrogen leaving the bound state respectively. The formation of hydrogen bubbles on the silicon surface by external hydrogen diffusion produced as a result of oxidation reaction was obtained. 8 Физика и техника полупроводников, 2019, том 53, вып. 2

Анодное окисление слоев кремний-на-изоляторе, созданных методом водородного переноса