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The paper presents the developed ellipsometric technique of non-contact in situ measurement of the CdTe buffer layer temperature. The technique is based on the temperature dependence of the energy position of CdTe critical points and is designed to determine the starting temperature of the growth surface before epitaxy of the cadmium−mercury−telluride compound. An express method for determining the position of critical points in the spectra of the ellipsometric 9 parameter is proposed. A series of experiments were carried out, which resulted in determination of the position of critical points on temperature. Estimates and experiment show that the temperature measurement accuracy is ±3◦C. Физика и техника полупроводников, 2019, том 53, вып. 1

Эллипсометрический метод измерения температуры буферных слоев CdTe в технологии молекулярно-лучевой эпитаксии CdHgTe