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Systematized results of the research of composition, morphology, structure, optical properties and conductivity of the deposited films of copper(I) selenide with the thickness 390−400 nm are presented. They were obtained by using raster electron microscopy, element energy-dispersion analysis, X -ray diffraction and X -ray photoelectron spectroscopy. The hole type of conductivity of the layers were determined by thermoemf. Optical band gap of the films was determined using the results of optical absorbance spectra at 298K, it is 2.5 and 1.84 eV for direct and indirect transitions, respectively. 7∗ Физика и техника полупроводников, 2018, том 52, вып. 10

Тонкие пленки селенида меди(I): состав, морфология, структура, оптические свойства