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The work focuses on two objectives. First is study of the behavior of electric-resonance features observed in the photovoltaic characteristics of InAs/GaAs heterostructures. Second is identification of the emission mechanism of charge carriers which are excited by light from InAs quantum dots into the GaAs matrix. The photocurrent is defined solely by electron tunneling through the potential barrier at the layers boundary at the presence of a strong electric field. Comparison of the experimental curves with the quasi-classical expression for the tunneling current component and analysis of potential structure have led to the refinement of some parameters of investigated heterostructures and revelation of the resonant component associated with the tunneling of electrons through the barrier with participation of local defect levels at the interface. Theoretical analysis has been carried out to study the effect of the exciting level of the electron subsystem on the photocurrent flowing throw burrier between InAs QD and

Электрополевое поведение резонансных особенностей в туннельной составляющей фототока в гетероструктурах InAs(QD)/GaAs