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We present investigation into interband photoluminescence (PL) and stimulated emission (SE) in HgCdTe based waveguide structures with narrow gap quantum wells (QWs). Such HgCdTe structures can be implemented for developing the lasers in the wavelength range of 25−60micron, which is not covered by quantum cascade lasers. We discuss the optimal designs of HgCdTe QWs for obtaining the long-wavelength SE under optical pumping. Narrow HgTe QWs are shown to be more promising than thick (potential) wells because of suppression of the Auger recombination. It is demonstrated that the molecular beam epitaxy can produce waveguide structures for emission wavelengths as long as 25micron at a high growth rate. SE wavelength up to 14 microns is demonstrated with a threshold excitation intensity in the range 100−500W/cm at 20K. Физика и техника полупроводников, 2017, том 51, вып. 12

Исследования волноводных структур с квантовыми ямами на основе HgCdTe для получения длинноволнового стимулированного излучения