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The ability to create metamorphic hybrid heterostructure of 1300 nm spectral band VCSEL is demonstrated. Metamorphic semiconductor part of heterostructure with GaAs/AlGaAs DBR and InAlGaAs/InGaAs QW active region has been grown by molecular beam epitaxy (MBE) on GaAs(100). Top dielectric SiO2/Ta2O5 DBR is made by the magnetron sputtering method. VCSEL has been studied under optical pumping (λ = 532 nm, diameter of the focused laser beam of ∼ 1 μm) by using micro-PL setup in the range of optical pump power 0−70mW at room temperature. Presence of the superlinear PL intensity growth having threshold-like dependence of PL integral intensity together with the PL peaks narrowing and mode composition modification with the pumping density increasing could be attributed to lasing behavior of the structure. Obtained results indicate the opportunity to use metamorphic growth on GaAs substrates for the 1300 nm range VCSEL manufacturing. Физика и техника полупроводников, 2017, том 51, вып. 9

Оптические свойства метаморфной гибридной гетероструктуры вертикально излучающего лазера спектрального диапазона 1300 нм