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Structural, chemical and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of semi-insulating 6H-SiC in an argon environment is studied by Raman spectroscopy, atomic force microscopy, electron diffraction, X -ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X -ray absorption spectroscopy at the carbon K-edge. It is shown that the results of systematic complex investigations allowed optimization of growth parameters and creation of a reliable growth technology for high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. Физика и техника полупроводников, 2017, том 51, вып. 8

Исследование кристаллической и электронной структуры графеновых пленок, выращенных на 6H-SiC (0001)