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The comparative analysis of structural features was carried out for higher manganese silicide films grown by reactive deposition of evaporated manganese onto silicon substrate in a sealed quartz ampule and in a quartz reactor with a continuous pumping. Scanning electron-ion microscopy and high-resolution transmission electron microscopy shows that at evacuated ampoule the textured single-phase film of higher manganese silicide is formed. Changes of the growth conditions from fixed (ampoule) to the quasi-stationary (reactor) leads to formation of the polycrystalline higher manganese silicide islands with nanoscale inclusions of manganese monosilicide phase. Физика и техника полупроводников, 2017, том 51, вып. 6

Структура термоэлектрических пленок высшего силицида марганца на кремнии по данными электронной микроскопии