English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Dark interaction of heavily doped Si crystals of pand n-type conductivity with 48% HF water solution in the presence and without contact with having different work function metals (Ag and Pd) was studied. Dependences of dissolution rates of Si crystals in HF solutions which contain oxidizers with different redox potential values (FeCl3, V2O5 and CrO3) were investigated as a function of silicon doping type and level. Analysis of the obtained data allows to conclude that silicon valence band holes do not direct participate in anodic reactions of oxidation and dissolution of silicon atoms. In addition, the rate of silicon dissolution is not limited by the rate of hole generation. In contrast, we show that character and the rate of chemical processes leading to silicon dissolution in HF-containing electrolytes depended on the value of potential drop adjusted on the semiconductor−electrolyte interface. Mechanism of electrochemical pores formation in silicon crystals is discussed in the terms of self-consistent cooperative reactions of nucleophilic substitution between chemisorbed fluorine anions and silicon atoms of subsurface layer of the crystal. The specific feature of such reactions for silicon crystals consists in participation of nonbonding dsp-orbitales in formation of intermediate complexes. Energy levels of such orbitals are assumed to belong to 1-valley of conduction band of silicon crystals. In accordance with the proposed conception, the pore formation arise under potential drop in interface layer as a result of local separation from the crystal of (SiF2)n polymer chains. The process leads to propagation of the pores mainly along 〈100〉 crystal directions. Thermodynamic aspects of nucleation of the pores on the crystal surface and their sizes in the crystals of different type and doping levels are discussed. Basing on the model, noncontradictory interpretation of the existing experimental studies on the etching of silicon crystals in HF-containing solutions under different conditions can be suggested. Физика и техника полупроводников, 2017, том 51, вып. 4

Анодные процессы в условиях химического и электрохимического травления кристаллов кремния в кислых фторидных растворах. Механизм порообразования