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The model of Pb1−xSnxTe : In solid solution based on the concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi level and carrier concentration depending on the level of indium doping are calculated and compared with experimental results. The calculation of transient current-voltage characteristics in the injection mode and limitation by space charge at different voltage rates is carried out. This data is compared with the experimental results, and it is shown that the behavior of the characteristics is determined by electron capture parameters of localized states. The relaxations of the photocurrent in a magnetic field are explored and the relaxation mechanism under the assumption of the magnetic freezing out of the carriers is discussed. Физика и техника полупроводников, 2016, том 50, вып. 12

Твердый раствор PbSnTe : In --- уровни захвата, гальваномагнитные свойства и ТГц фоточувствительность