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520 nm true green lasing was demonstrated by using InGaN based laser diodes (LDs) on novel semipolar {202 1} GaN substrates under continuous-wave (cw) operation at room temperature. The longest lasing wavelength reached 531 nm under pulsed operation, which indicates that the semi-polar {202 1} LDs are able to cover over the whole green region. Utilization of a novel {202 1} plane improved the homogeneity of In composition and thickness of the InGaN quantum wells (QWs) even at high In composition, which was exhibited with narrower spectral widths of spontaneous emission from LDs than those on other planes. Moreover, the homogeneity was indicated by uniform photoluminescence image and abrupt QW’s interfaces from scanning transmission electron microscopy. The high quality InGaN QWs on the {202 1} plane advanced the realization of the green LDs.

True Green Laser Diodes Fabricated on Semi-Polar 2021 GaN Substrates