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A photoelectron spectromicroscope with a monochromatized laser-produced plasma EUV light source has been developed, and its performance was investigated. The monochromatized laser-produced plasma EUV light source can operate at 50 Hz repetition rate. First, various experiments were carried out to investigate the characteristics of this EUV light source. When an aluminum tape-target was used to produce 13 nm radiation, it was observed that there exists an optimal irradiation intensity of the laser beam for excitation. It turns out that the power density ranging from 400 GW/cm2 to 500 GW/cm2 on a target is required. Besides, a spatial distribution of the main spectral line radiation was measured in the cross sectional view to the plasma. It was found that there was a region where the 13 nm radiation is dominant, which exists at the position about 1 mm away from the target surface. Moreover, the absolute radiation intensity of the 13 nm radiation in the EUV light source was measured and estimated to be 4 [mJ/2πsr/±2 %BW/pulse]. Then, by using this developed photoelectron spectromicroscope, photoelectron spectrum observation has been performed. When a GaAs wafer was used as a sample, photoelectron spectra of Ga-3d and As-3d in GaAs were observed. At present, spatial resolution of less than about 5 μm could be obtained. This result shows that the developed photoelectron spectromicroscope can be applied to valence-band electron analysis successfully.

Development of Photoelectron Spectromicroscope with Laser-Produced Plasma EUV Light Source Using Tape-Target